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Transmission Line Matrix Modelling of Self Heating in Multi-finger 4H-SiC MESFETs

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Author(s): A. Feradji | S.H. Pulko | A. Saidane | A.J. Wilkinson

Journal: Journal of Applied Sciences
ISSN 1812-5654

Volume: 12;
Issue: 1;
Start page: 32;
Date: 2012;
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Keywords: MESFET | TLM | self heating | temperature | SiC

ABSTRACT
This study, presents a physical model with numerical simulations of self-heating in multi-finger 4H-SiC MESFETs. The model is based upon the parabolic heat diffusion equation. The governing equations and the associated boundary conditions are discretized and solved using the TLM method. Numerical simulations are presented for the case of six finger gate 4H-SiC MESFETs. Results show the effect of gate pitch and substrate thickness on temperature spreading and hot spot formation in the active area of the device. The transient by which steady state hotspot temperatures are reached is also considered.
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