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Traps in Zirconium Alloys Oxide Layers

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Author(s): Helmar Frank

Journal: Advances in Electrical and Electronic Engineering
ISSN 1804-3119

Volume: 4;
Issue: 2;
Start page: 58;
Date: 2005;
Original page

Keywords: Zirconium | analysing | temperatures | energy.

ABSTRACT
Oxide films long-time grown on tubes of three types of zirconium alloys in water and in steam were investigated, by analysing I-V characteristic measured at constant voltages with various temperatures. Using theoretical concepts of Rose [3] and Gould [5], ZryNbSn(Fe) proved to have an exponential distribution of trapping centers below the conduction band edge, wheras Zr1Nb and IMP Zry-4 proved to have single energy trap levels.
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