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Ultralow-Voltage Differential Sensing Schmitt-Trigger-Based SRAM Design

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Author(s): I.Penchala Reddy1 , Sandeep Kumar Reddy.B

Journal: International Journal of Engineering Trends and Technology
ISSN 2231-5381

Volume: 4;
Issue: 7;
Start page: 3222;
Date: 2013;
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Keywords: Read failure | Write failure | access time failure | Schmitt-Trigger

ABSTRACT
In this paper we are going to propose the differential sensing static random access memory (SRAM) bit cells for ultralow-power and ultralow-area Schmitt trigger operation. The ST-based differential sensing SRAM bit cells address the fundamental conflicting design requirement of the read versus write operation of a conventional 6T bit cell. The ST operation gives better read-stability as well as better write-ability compared to the standard 6T bit cell. The proposed ST based circuit will be having the feedback mechanism with in itself. The ST-2 bit cell is practically proved that it gives the ultra low power and ultra low are compared with the existing design. Design and Simulations will be done using DSCH and Microwind.
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Tango Jona
Tangokurs Rapperswil-Jona