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Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications

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Author(s): Masoud Sabaghi | Seyed Reza Hadianamrei | Mehdi Rahnama | Maziyar Niyakan Lahiji

Journal: International Journal of Communications, Network and System Sciences
ISSN 1913-3715

Volume: 04;
Issue: 10;
Start page: 662;
Date: 2011;
Original page

Keywords: ADS | Class F Power Amplifier | LD MOS | WCDMA

ABSTRACT
The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.

Tango Jona
Tangokurs Rapperswil-Jona

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