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Using MEMS Capacitive Switches in Tunable RF Amplifiers

Author(s): Danson John | Plett Calvin | Tait Niall

Journal: EURASIP Journal on Wireless Communications and Networking
ISSN 1687-1472

Volume: 2006;
Issue: 1;
Start page: 016518;
Date: 2006;
Original page

A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA) operating at GHz and GHz, and a tunable power amplifier (PA) at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB noise figure. MEMS switches are used to implement a variable matching network that allows the PA to realize up to 37% PAE improvement at low input powers.
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