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Weak localization and percolation effects in annealed In2O3-ZnO thin films

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Author(s): B. Shinozaki | S. Ezaki | K. Hidaka | K. Makise | T. Asano | K. Yano | H. Nakamura

Journal: AIP Advances
ISSN 2158-3226

Volume: 1;
Issue: 3;
Start page: 032149;
Date: 2011;
Original page

ABSTRACT
We have investigated the temperature T and magnetic field H dependences of the sheet resistance R□ of thin (In2O3)0.975-(ZnO)0.025 films with different resistivities and carrier densities prepared by postannealing in air at various annealing temperatures Ta. Regarding the magnetoconductance Δσ(H) ≡ 1/R□(H) − 1/R□(0) of films with large values of sheet resistance R□, agreement between weak localization theory and the data cannot be obtained for any value of the localization length L in (T) = D τ in (T) , where D and τin are the diffusion constant and inelastic scattering time, respectively. Taking account of the inhomogeneous morphology confirmed by Scanning Electron Microscopy (SEM) observation, we introduced the effective sheet resistance R□eff given by R□eff = α × R□meas., where the strength of reduction factor α is less than unit, α ⩽ 1. Using a suitable value of α(Ta), we successfully fitted the theory to data for Δσeff(H, T), regarding Lin2(T) as a fitting parameter in the region 2.0 K⩽T ⩽ 50 K. It was confirmed that the rate 1/τin(T) is given by the sum of the electron-electron and electron-phonon inelastic scattering rates.
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