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{2-[Bis(3-methyl-1H-indol-2-yl)methyl]phenolato-κO}dimethyl(tetrahydrofuran-κO)aluminium(III)

Author(s): Audrey C. Eisenberg | Joseph M. Tanski | Yutan D. Y. L. Getzler
Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Author(s): Wipakorn Jevasuwan | Yuji Urabe | Tatsuro Maeda | Noriyuki Miyata | Tetsuji Yasuda | Hisashi Yamada | Masahiko Hata | Noriyuki Taoka | Mitsuru Takenaka | Shinichi Takagi
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