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Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Author(s): Wipakorn Jevasuwan | Yuji Urabe | Tatsuro Maeda | Noriyuki Miyata | Tetsuji Yasuda | Hisashi Yamada | Masahiko Hata | Noriyuki Taoka | Mitsuru Takenaka | Shinichi Takagi

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Tangokurs Rapperswil-Jona

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