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Chemical HF Treatment for Rear Surface Passivation of Crystalline Silicon Solar Cells

Author(s): Hwa-Il Seo | Jeong-Ho Choi | Si-Cheol Roh | Jong-Dae Jung

Journal: Transactions on Electrical and Electronic Materials
ISSN 1229-7607

Volume: 14;
Issue: 4;
Start page: 203;
Date: 2013;
Original page

Keywords: Surface passivation | HF treatment | Minority carrier lifetime | PERC

P-type Si wafers were dipped in HF solution. The minority carrier lifetime (lifetime) increased after HF treatment dueto the hydrogen termination effect. To investigate the film passivation effect, PECVD was used to deposit SiNx on bothHF-treated and untreated wafers. SiNx generally helped to improve the lifetime. A thermal process at 850℃ reducedthe lifetime of all wafers because of the dehydrogenation at high temperature. However, the HF-treated wafers showedbetter lifetime than untreated wafers. PERCs both passivated and not passivated by HF treatment were fabricated onthe rear side, and their characteristics were measured. The short-circuit current density and the open-circuit voltagewere improved due to the effectively increased lifetime by HF treatment.
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