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Circuit design with Independent Double Gate Transistors

Author(s): M. Weis | R. Emling | D. Schmitt-Landsiedel

Journal: Advances in Radio Science - Kleinheubacher Berichte
ISSN 1684-9965

Volume: 7;
Start page: 231;
Date: 2009;
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Circuits with transistors using independently controlled gates have been proposed to reduce the number of transistors and to increase the logic density per area. This paper introduces a novel Vertical Slit Field Effect Transistor with unique independent double gate properties to demonstrate the possible advantages for independent double gate circuits. A new adder circuit is proposed, where the power could be reduced by one fifth and the area by on third compared to a tied gate configuration.
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