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Dynamic Deformation Electron-Phonon Interaction in Disordered Bulk Semiconductor

Author(s): Syed Tahir Hasan | Ami Chand Sharma | Pushpendra Tripathi | Syed Sikandar Zulqarnyn Ashraf

Journal: Journal of Biophysical Chemistry
ISSN 2153-036X

Volume: 02;
Issue: 01;
Start page: 42;
Date: 2012;
Original page

Keywords: Electron-Phonon Scattering Rate | Dynamic Screening | Deformation Potential

We present our theoretical investigations on the effects of disorder on the electron-phonon interaction in semiconducting GaAs system. Both the temperature (T) and disorder (electron mean free path l) dependences of the electron-phonon scattering rate have been determined. On consideration of the dynamic screening, we find a significant change in the temperature exponent as well as the pre factor ? from the earlier reported temperature power law dependence result ?T6 obtained under static screening. Also the dynamic screening makes a noticeable change in the character of the dependence of scattering rate on the mean free path from the static screening result.

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