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Effect of Copper Doping on Structural, Dielectric and DC Electrical Resistivity Properties of BaTiO3

Author(s): Moganti Venkata Someswara Rao | Kocharlakota Venkata Ramesh | Majeti Naga Venkata Ramesh | Bonthula Srinivasa Rao

Journal: Advances in Materials Physics and Chemistry
ISSN 2162-531X

Volume: 03;
Issue: 01;
Start page: 77;
Date: 2013;
Original page

Keywords: Barium Titanate | Copper Doping | Dielectric Properties | DC Electrical Resistivity | Frequency Dependence

The modified BaTiO3 ferroelectric materials are suitable for pyroelectric applications. This paper reports the structural, dielectric and electrical properties on copper influence in BaTiO3 when it was substituted site “A” of perovskite structure of BaTiO3. Copper has been chosen for modified BaTiO3 with different concentrations with stoichiometry Ba1-xCuxTiO3, where x = 0.01%, 0.02%, 0.03% and 0.04%. The X-ray diffraction patterns of the samples doped with different composition of CuO are found to be that the positions and intensities of the diffraction peaks are similar and no secondary phases were observed. The Curie’s temperature (Tc) for all CuO doped BaTiO3 with were found to be in the range of 120°C to 125°C. The frequency dependence of relative permittivity (εr) and dielectric loss (Tanδ) of Ba1-xCuxTiO3 samples at room temperature were reported in the range 100 KHz - 1 MHz. The temperature dependence of D.C electrical resistivity studies were reported for all samples indicating that the participation of Cu2+-Cu+ ions in the conduction process around their Curie’s temperature.
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