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The Effect of the MeV Si-Ion Irradiation on the Photoluminescence of Silicon Nanocrystals

Author(s): Alejandra López-Suárez

Journal: World Journal of Condensed Matter Physics
ISSN 2160-6919

Volume: 03;
Issue: 02;
Start page: 119;
Date: 2013;
Original page

Keywords: Silicon Nitride | Silicon Nanocrystals | Photoluminescence | RBS | ERDA

Silicon nanocrystals embedded in silicon nitride films were irradiated with Si-ions at 8 MeV in order to modify their optical response. The samples were characterized by means of Rutherford Backscattering Spectrometry, Elastic Recoil Detection Analysis, High-Resolution Transmission Electronic Microscopy and Photoluminescence analysis. It was found a blue-shift in the photoluminescence emission from the as-grown films after they were irradiated with high energetic silicon ions. According to the quantum confinement theory, this fact is related to a decrease in size of the silicon nanocrystals, which means that a higher silicon fluence irradiation is related with a diminishing in silicon nanocrystal size.
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