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Epitaxial Al2O3 capacitors for low microwave loss superconducting quantum circuits

Author(s): K.-H. Cho | U. Patel | J. Podkaminer | Y. Gao | C. M. Folkman | C. W. Bark | S. Lee | Y. Zhang | X. Q. Pan | R. McDermott | C. B. Eom

Journal: APL Materials
ISSN 2166-532X

Volume: 1;
Issue: 4;
Start page: 042115;
Date: 2013;
Original page

We have characterized the microwave loss of high-Q parallel plate capacitors fabricated from thin-film Al/Al2O3/Re heterostructures on (0001) Al2O3 substrates. The superconductor-insulator-superconductor trilayers were grown in situ in a hybrid deposition system: the epitaxial Re base and polycrystalline Al counterelectrode layers were grown by sputtering, while the epitaxial Al2O3 layer was grown by pulsed laser deposition. Structural analysis indicates a highly crystalline epitaxial Al2O3 layer and sharp interfaces. The measured intrinsic (low-power, low-temperature) quality factor of the resonators is as high as 3 × 104. These results indicate that low-loss grown Al2O3 is an attractive candidate dielectric for high-fidelity superconducting qubit circuits.
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