Academic Journals Database
Disseminating quality controlled scientific knowledge

Evaluation of Electrical Stress Effect on Class F Power Amplifier by Simulation

Author(s): J. S. Yuan | E. Kritchanchai

Journal: Advances in Microelectronic Engineering
ISSN 2327-7300

Volume: 1;
Issue: 1;
Start page: 1;
Date: 2013;
Original page

Keywords: Class F | Hot Electron | Oxide Stress | Power Amplifier | Reliability

A class F power amplifier has been designed using TSMC 0.18 µm CMOS mixed-signal RF technology at 5.8 GHz. The PA’s output power and power-added efficiency have been evaluated using the ADS simulation. Physical insight of transistor operation in the RF circuit environment has been examined using the Sentaurus mixed-mode device and circuit simulation. The transient drain-source voltage waveform indicates that the output stage transistor is under much higher voltage stress than that of the input stage transistor. The hot electron effect and device self-heating degrade the output power and power-added efficiency of the power amplifier, especially when both the input transistor and output transistor suffer high impact ionization rates and lattice heating.
RPA Switzerland

RPA Switzerland

Robotic process automation


Tango Jona
Tangokurs Rapperswil-Jona