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Fabrication and characterization of porous silicon for photonic applications

Author(s): Arvin I. Mabilangan | Niel Gabriel E. Saplagio | Eloise P. Anguluan | Neil Irvin F. Cabello | Rhona Olivia M. Gonzales | Armando S. Somintac | Arnel A. Salvador

Journal: Science Diliman
ISSN 0115-7809

Volume: 25;
Issue: 1;
Start page: 16;
Date: 2013;
Original page

Keywords: silicon | anodization | porous materials | photonic applications

Porous silicon (PSi) thin films from p-type silicon (100) substrates were fabricated using a simple table top electrochemical etching setup with a 1:1 HF:EtOh electrolyte solution. Porous silicon f ilms with different morphologies and optical properties were achieved by varying the etching parameters, such as HF concentration, etching time andanodization current. It was observed that the f ilm thickness of the fabricated PSi increased with etch time and HF concentration. The etch rate increased with the applied anodization current. Reflection spectroscopy at normal incidence was used to determine the refractive indices of the fabricated f ilms. Using the Sellmeier equation, the chromatic dispersion of the f ilms was obtained for different HF concentrations and anodization currents.
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