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Influence of gate tunneling currents on switched capacitor integrators

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Author(s): W. Kraus | D. Schmitt-Landsiedel

Journal: Advances in Radio Science - Kleinheubacher Berichte
ISSN 1684-9965

Volume: 7;
Start page: 225;
Date: 2009;
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ABSTRACT
In order to achieve a higher level of integration in modern VLSI systems, not only the lateral geometrical dimensions have to be scaled. Lowering the supply voltage also requires scaling down the oxide thickness of the transistors. While the oxide thickness is scaled down proportionally with the supply voltage, the gate tunneling currents grow exponentially, which results in special issues concerning deviations in charge based analog and mixed signal circuitry. The influence of gate tunneling currents on this kind of circuits will be demonstrated at a fully differential switched capacitor integrator. The used process data is derived from the International Technology Roadmap for Semiconductors (ITRS Roadmap, 2006). The Parameter sets for the simulations are based on the Predictive Technology Model of the Arizona State University Modelling Group for the 65 nm Technology node (Predictive Technology Model, 2008).
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