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Integration of TaOx-based resistive-switching element and GaAs diode

Author(s): Z. Xu | X. Tong | S. F. Yoon | Y. C. Yeo | C. K. Chia | G. K. Dalapati | D. Z. Chi

Journal: APL Materials
ISSN 2166-532X

Volume: 1;
Issue: 3;
Start page: 032121;
Date: 2013;
Original page

We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V.

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