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Investigation of the Nanostructures Formation in the Irradiated by γ-Quanta Single-Crystal Silicon with Ultrasonic Method

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Author(s): Turdali Khaydarov | Izida Khamidovna Abdukadirova | Yuriy Karimov

Journal: Advances in Materials Physics and Chemistry
ISSN 2162-531X

Volume: 02;
Issue: 03;
Start page: 155;
Date: 2012;
Original page

Keywords: Internal Friction | Density of Dislocations | Si | Radiation Defects | Annihilation

ABSTRACT
It’s determined that a phasic dynamics of deformation strengthening of single-crystal silicon irradiated by γ-quanta (with energy ~1.27 MeV) in the range of radiation absorbed doses from 102 up to 109 rad by the internal friction measurement with widely known ultrasonic resonance method. We have detected appearance the maximum on the dependence of internal friction (Q-1) from dose at 5 × 105 rad in the specimens of p - Si with a density of the dislocations more than 103 cm-2. The instability of the dislocation structures has been established in the range of doses from 106 up to 109 rad, due to the formation and accumulation in the crystal lattice of the point like and the continuous radiation defects. On the time dependence of Q-1(t) per 1.5 - 2 hours after irradiation, the maximum has been established which position depends on dose of radiation. The monotonic decrease of Q-1(t) dependence was observed at the increase of the observation time after stopping of the specimen irradiation, which is connected with decreasing of the radiation defects densities as the result of their annihilation.
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