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Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips

Author(s): Yasuhisa Omura | Yukio Iida

Journal: Circuits and Systems
ISSN 2153-1285

Volume: 04;
Issue: 02;
Start page: 173;
Date: 2013;
Original page

Keywords: RF-ID | Schenkel Circuit | SOI-MOSFET | Quasi-Diode | Low-Power

The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost-up efficiency for d. c. condition and a. c. condition are proposed and are examined by simulations. It is shown that the SOI-MOSFET-based quasi-diode is a promising device for the Schenkel circuit because high boost-up efficiency can be gained easily. An a. c. analysis indicates that the fully-depleted condition should hold to suppress the floating-body effect for GHz-level RF applications of a quasi-diode.
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