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Research for Patterned Sapphire Substrates of GaN-based LEDs

Author(s): LI Cheng-Cheng, XU Zhi-Mou, SUN Tang-You, WANG Zhi-Hao, WANG Shuang-Bao, ZHANG Xue-Ming, PENG Jing

Journal: Journal of Inorganic Materials
ISSN 1000-324X

Volume: 28;
Issue: 8;
Start page: 869;
Date: 2013;
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Keywords: GaN-based LED; FDTD; patterned sapphire substrates; nano-imprint

Patterned Sapphire Substrate (PSS) which can reduce the density of threading dislocation and enhance the effect of scattering is widely used to fabricate high-power Light-Emitting-Diode (LED) chip. In this paper, the finite- difference time-domain (FDTD) method was used to simulate and analyze the light extraction efficiency (LEE) of GaN-based micro-scale and nano-scale patterned sapphire substrates LED. The results show that the nano-patterned sapphire substrate (NPSS) has a significantly better LEE than that of micro-patterned sapphire substrate (MPSS). And in NPSS, the LEE of the pillar structure improveed 96.6% comparing to other nano-patterned structures. Large areas of table-like nano-sapphire patterned substrates are successfully prepared through soft embossing technology. The photoluminescence (PL) of the LED grown on table-like nano-sapphire patterned substrates is 8 times stronger than that of the LED grown on the unpatterned sapphire wafers.
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