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Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ

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Author(s): P. L. Bach | J. M. Vila-Fungueiriño | V. Leborán | Elías Ferreiro-Vila | B. Rodríguez-González | F. Rivadulla

Journal: APL Materials
ISSN 2166-532X

Volume: 1;
Issue: 2;
Start page: 021101;
Date: 2013;
Original page

ABSTRACT
We propose a novel route for optimizing the thermoelectric power of a polaronic conductor, independent of its electronic conductivity. This mechanism is exemplified here in thin-films of La2NiO4+δ. Tensile stress induced by epitaxial growth on SrTiO3 doubles the thermoelectric power of ≈15 nm thick films relative to ≈90 nm films, while the electronic conductivity remains practically unchanged. Epitaxial strain influences the statistical contribution to the high temperature thermopower, but introduces a smaller correction to the electronic conductivity. This mechanism provides a new way for optimizing the high temperature thermoelectric performance of polaronic conductors.
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