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Stress Topology within Silicon Single-Crystal Cantilever Beam

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Author(s): A.P. Kuzmenko | D.I. Timakov | P.V. Abakumov | M.B. Dobromyslov | L.V.Odnodvorets

Journal: Journal of Nano- and Electronic Physics
ISSN 2077-6772

Volume: 5;
Issue: 3;
Start page: 03024-1;
Date: 2013;
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Keywords: Raman scattering spectroscopy | Silicon single-crystal | Flexural stresses | Mapping of Raman shift distribution

ABSTRACT
Qualitative mechanism in line with experimental data on visualization of the domain structure and fine structure of the domain wall in weak ferromagnets has been proposed. The mechanism is based on the phenomenological consideration of Faraday rotation, optical absorption, and atom polarization in response to the radiation exciting Raman scattering. Qualitative agreement of estimates on the scattered radiation intensity in oppositely- magnetized domains with experimental results is good, which made it possible to attack problems of visualization of magnetic entities with nanoscale resolution.

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