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Threshold voltage modeling in (100), (110) and (111) oriented nanoscale MOSFET substrates

Author(s): Chaudhry Amit | Jatindra Nath Roy

Journal: Serbian Journal of Electrical Engineering
ISSN 1451-4869

Volume: 8;
Issue: 2;
Start page: 147;
Date: 2011;
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Keywords: orientation | model | inversion quantization | MOS device | threshold voltage

An analytical model for the inversion layer quantization for nanoscale - Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with different crystallographic substrate orientations, such as (100), (110) and (111) has been developed. The threshold voltage analysis has been studied using the quantum inversion charge model under three substrate orientations. The results indicate a significant impact of crystal orientation on the threshold voltage and the inversion charge density. The results have also been compared with the numerically reported results and show good agreement.
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